FQP6N90C / FQPF6N90C
N-Channel QFET MOSFET
900 V, 6.0 A, 2.3 Ω
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
6.0 A, 900 V, RDs(on) = 2.3 Ω (Max.) @ VGs = 10 V lD = 3 A
Low Gate Charge (Typ. 30 nC)
Low Crss (Typ. 11pF)
100% Avalanche Tested
Please feel free to contact us for more information.
We are committing to offer BOM solution components to STM Factories, PCB Assembly factories, and also brokers / vendors who offer components to end users.
We have very goods experience of offering BOM services components sourcing & purchasing for medical equipment. We are trying to find more clients in different industries around the world.
Please contact us any time when you need electronic components. We will respond your message within 12 hours.
