FDS6912A
General Description
These N-Channel Logic Level MOSFETs are produced using on semi's advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
--6.0 A ,30 V
Rds(ON) = 28 mΩ @ Vgs = 10 V
Rds(ON) = 35 mΩ @ Vgs = 4.5 V
--Fast Switching Speed
--Low Gate Charge
--High Performance Trench Technology for Extremely Low Rds(on)
--High Power and Current Handling Capability
--This Device is Pb-Free and Halogen Free
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