FDS6680A
General Description
This N-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
--12.5 A, 30 V Rds(on)= 9.5 mΩ @ Vgs = 10 V
Rds(on) = 13 mΩ @ Vgs = 4.5 V
--Ultra-low gate charge
--High performance trench technology for extremely low Rds(on)
--High power and current handling capability
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