Description
This P-Channel MOSFET is produced using ON Semiconductor's advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
--Max Rds(on) = 20 mΩ at Vgs = -10 V Id = -8.8 A
--Max Rds(on) = 35 mΩ at Vgs = -4.5 V Id = -6.7 A
--Extended Vgss Range (-25 V) for Battery Applications
--HBM ESD Protection Level of +3.8 kV Typical (Note 3)
--High Performance Trench Technology for Extremely Low Rds(on)
--High Power and Current Handling Capability
--This Device is Pb-Free and RoHS Compliant
If you are interested in our products,or want to get PDF data sheets.Please feel free to contact us.
Goson will try our best to meet your urgent needs:
--Electronic Components purchasing
--ONE-Stop BOM services and components purchasing
--PCB Assembly factories/Industrial equipment
--Hard-to-find parts souring.
Thanks and looking forward to your inquiry!
