FDB029N06
N-Channel PowerTrench®MOSFET
O-60 V, 193 A, 3.1 mΩ.
Features
--Rds(on) = 2.4 mΩ (Typ.) @ Vgs = 10 V, ld = 75 A
--Fast Switching Speed
--Low Gate Charge
--High Performance Trench Technology for Extremely Low Rds(on)
--High Power and Current Handling Capability
--RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
--Synchronous Rectification for ATX / Server / Telecom PSU
--Battery Protection Circuit
--Motor Drives and Uninterruptible Power Supplies
--Renewable System
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