Features
• 4.5V to 5.5V Read/Write
• Access Time - 70 ns
• Sector Erase Architecture
– Thirty 32K Word (64K byte) Sectors with Individual Write Lockout
– Eight 4K Word (8K byte) Sectors with Individual Write Lockout
– Two 16K Word (32K byte) Sectors with Individual Write Lockout
• Fast Word Program Time - 10 µs
• Fast Sector Erase Time - 200 ms
• Dual Plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors
Memory Plane B: Twenty-four 32K Word Sectors
• Erase Suspend Capability
– Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
• Low-power Operation
– 60 mA Active
– 3 mA Standby
• DATA Polling, Toggle Bit, Ready/Busy for End of Program Detection
• RESET Input for Device Initialization
• Sector Program Unlock Command
• TSOP, CBGA, and µBGA Package Options
• Top or Bottom Boot Block Configuration Available
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