Description
The AT28C256 is a high-performance Electrically Erasable and Programmable Read-Only Memory (EEPROM). lts 256-Kb memory is organized as 32,768 words by 8 bits. Manufaclured with Microchip's advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 440 mW. When the deviceis deselected, the CMOS standby current is less than 200 μA.
The AT28C256 is accessed like a Static RAM for the read or write cycle wilthout the need for external components. The device conlains a 64-byte page regisler to allow writing of up lo 64 bytes simultaneously. During a wrlte cycle, the address and 1 to 64 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA Polling of I/O7. Once the end of a write cycle has been detected, a new access for a read or write can begin.
The AT28C256 has additional features to ensure high quality and manufaclurability. The device utilizes internal error correction for extended endurance and improved data retention characteristics. An optional software data protection mechanism is avaiable to guard against inadvertent writes. The device also includes an extra 64 bytes of EEPROM for device identification or tracking.
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