Feature
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications 2SK368 Unit: mm · High breakdown voltage: VGDS = ?100 V (min) · High input impedance: IGSS = ?1.0 nA (max) (VGS = ?80 V) · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -100 10 150 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-236MOD JEITA SC-59 TOS.
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