FEATURES
Super low on-state resistance
RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
Low Ciss: Ciss = 5500 pF TYP
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±60 A
Drain Current (pulse) Note1 ID(pulse) ±240 A
Total Power Dissipation (TC = 25°C) PT1 84 W
Total Power Dissipation (TA = 25°C) PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Energy Note2 EAS 137 mJ
Repetitive Avalanche Current Note3 IAR 37 A
Repetitive Avalanche Energy Note3 EAR 137 mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. Tch(peak) ≤ 150°C, RG = 25 Ω
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