Applications
4 V gate drive
Low drain?source ON resistance : RDS (ON) = 33 m? (typ.)
High forward transfer admittance : |Yfs| = 20 S (typ.)
Low leakage current : IDSS = ?100 μA (max) (VDS = ?60 V)
Enhancement?mode : Vth = ?0.8~?2.0 V (VDS = ?10 V, ID = ?1 mA)
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