2N2219
The CENTRAL SEMICONDUCTOR 2N2219 and
2N2219A are silicon NPN transistors manufactured by
the epitaxial planar process, and designed for small
signal general purpose and switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL 2N2219 2N2219A UNITS
Collector-Base Voltage VCBO 60 75 V
Collector-Emitter Voltage VCEO 30 40 V
Emitter-Base Voltage VEBO 5.0 6.0 V
Continuous Collector Current IC 800 mA
Power Dissipation PD 800 mW
Power Dissipation (TC=25°C) PD 3.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N2219 2N2219A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO VCB=50V - 10 - - nA
ICBO VCB=60V - - - 10 nA
ICEV VCE=60V, VEB=3.0V - - - 10 nA
IEBO VEB=3.0V - 10 - 10 nA
BVCBO IC=10μA 60 - 75 - V
BVCEO IC=10mA 30 - 40 - V
BVEBO IE=10μA 5.0 - 6.0 - V
VCE(SAT) IC=150mA, IB=15mA - 0.4 - 0.3 V
VCE(SAT) IC=500mA, IB=50mA - 1.6 - 1.0 V
VBE(SAT) IC=150mA, IB=15mA - 1.3 - 1.2 V
VBE(SAT) IC=500mA, IB=50mA - 2.6 - 2.0 V
hFE VCE=10V, IC=100μA 35 - 35 -
hFE VCE=10V, IC=1.0mA 50 - 50 -
hFE VCE=10V, IC=10mA 75 - 75 -
hFE VCE=10V, IC=150mA 100 300 100 300
hFE VCE=1.0V, IC=150mA 50 - 50 -
hFE VCE=10V, IC=500mA 30 - - -
hFE VCE=10V, IC=500mA - - 40 -
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